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GaN Based HEMTs: A Review of the Material and Growth Aspects
Dr. Srinivasan Raghavan and Mr. Nagaboopathy Mohan,
CeNSE, Indian Institute of Science, Bangalore. |
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2
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A Review on the GaN HEMT Transistor Design and Reliability
Mr. Vipin Joshi and Dr. Mayank Shrivastava,
DESE, Indian Institute of Science, Bangalore. |
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3
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A Survey on Commercially Available Gallium Nitride (GaN) Based Power Electronic Switches and GaN Based
High-Performance DC-DC Converters
Mr. Anirban Pal and Dr. G. Narayanan,
EEE, Indian Institute of Science, Bangalore. |
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4
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Power Device Packaging Types
Mr. Shreesha Prabhu and Dr. M. M. Nayak,
CeNSE, Indian Institute of Science, Bangalore. |
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Survey of Discrete Components for GaN Based DC-DC Converters
Mr. Ashish Kumar,
EEE, Indian Institute of Science, Bangalore. |
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6
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Normally-Off GaN based HEMTs
Mr. Rohith Soman, Dr. Srinivasan Raghavan and
Dr. Navakanta Bhat
CeNSE, Indian Institute of Science, Bangalore. |
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Gate Stack (Dielectrics) for AlGaN/GaN HEMTs
Mr. Rohith Soman, Dr. Srinivasan Raghavan and
Dr. Navakanta Bhat
CeNSE, Indian Institute of Science, Bangalore. |
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Technical Survey on GaN Devices for Switching Applications
Prepared by Power Electronics Group, CDAC, Thiruvananthapuram. |
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White Paper on Gallium Nitride (GaN) Based Power Electronics: Current Status and Roadmap
Prepared by IISc and CDAC(T) |
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