Technical Documents on Wide Band Gap Devices

    • Documents on Gallium Nitride
       
      1
      .
      GaN Based HEMTs: A Review of the Material and Growth Aspects
      Dr. Srinivasan Raghavan and Mr. Nagaboopathy Mohan,
      CeNSE, Indian Institute of Science, Bangalore.
       
      2
      .
      A Review on the GaN HEMT Transistor Design and Reliability
      Mr. Vipin Joshi and Dr. Mayank Shrivastava,
      DESE, Indian Institute of Science, Bangalore.
       
      3
      .
      A Survey on Commercially Available Gallium Nitride (GaN) Based Power Electronic Switches and GaN Based
      High-Performance DC-DC Converters

      Mr. Anirban Pal and Dr. G. Narayanan,
      EEE, Indian Institute of Science, Bangalore.
       
      4
      .
      Power Device Packaging Types
      Mr. Shreesha Prabhu and Dr. M. M. Nayak,
      CeNSE, Indian Institute of Science, Bangalore.
       
      5
      .
      Survey of Discrete Components for GaN Based DC-DC Converters
      Mr. Ashish Kumar,
      EEE, Indian Institute of Science, Bangalore.
       
      6
      .
      Normally-Off GaN based HEMTs
      Mr. Rohith Soman, Dr. Srinivasan Raghavan and
      Dr. Navakanta Bhat
      CeNSE, Indian Institute of Science, Bangalore.
       
      7
      .
      Gate Stack (Dielectrics) for AlGaN/GaN HEMTs
      Mr. Rohith Soman, Dr. Srinivasan Raghavan and
      Dr. Navakanta Bhat
      CeNSE, Indian Institute of Science, Bangalore.
       
      8
      .
      Technical Survey on GaN Devices for Switching Applications
      Prepared by Power Electronics Group, CDAC, Thiruvananthapuram.
       
      9
      .
      White Paper on Gallium Nitride (GaN) Based Power Electronics: Current Status and Roadmap
      Prepared by IISc and CDAC(T)
       
    • Documents on Silicon Carbide
       
      1
      .
      Next generation Wide band gap, Silicon Carbide Semiconductors for Power Electronics
      Prepared by Power Electronics Group, CDAC, Thiruvananthapuram